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128Mb: 8 Meg x 16 Mobile DDR SDRAM
Mobile Double Data Rate (DDR) SDRAM
MT46H8M16LF - 2 Meg x 16 x 4 Banks
For a complete data sheet, please refer to www.micron.com/mobileds.
Features
* VDD = +1.8V 0.1V, VDDQ = +1.8V 0.1V * Bidirectional data strobe per byte of data (DQS) * Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle * Differential clock inputs (CK and CK#) * Commands entered on each positive CK edge * DQS edge-aligned with data for READs; centeraligned with data for WRITEs * Four internal banks for concurrent operation * Data masks (DM) for masking write data-one mask per byte * Programmable burst lengths: 2, 4, or 8 * Concurrent auto precharge option is supported * Auto refresh and self refresh modes * 1.8V LVCMOS compatible inputs * On-chip temperature sensor to control refresh rate * Partial array self refresh (PASR) * Selectable output drive (DS) * Clock stop capability
Figure 1: 60-Ball VFBGA Assignment (Top View)
1 A
VSS DQ15 VSSQ VDDQ DQ0 VDD
2
3
4
5
6
7
8
9
B
VDDQ DQ13 DQ14 DQ1 DQ2 VSSQ
C
VSSQ DQ11 DQ12 DQ3 DQ4 VDDQ
D
VDDQ DQ9 DQ10 DQ5 DQ6 VSSQ
E
VSSQ UDQS DQ8 DQ7 LDQS VDDQ
F
VSS UDM NC NC LDM VDD
G
CKE CK CK# WE# CAS# RAS#
H
A9 A11 A12/NC CS# BA0 BA1
J
A6 A7 A8 A10/AP A0 A1
Options
* VDD/VDDQ * 1.8V/1.8V * Configuration * 8 Meg x 16 (2 Meg x 16 x 4 banks) * Plastic Package * 60-Ball VFBGA (Lead-Free) 8mm x 10mm * Timing - Cycle Time * 7.5ns @ CL = 3 * 10ns @ CL = 3 * Operating Temperature Range * Commercial (0 to +70C) * Industrial (-40C to +85C)
Marking
H 8M16 CF
K
VSS A4 A5 A2 A3 VDD
Table 1:
Configuration Addressing
8 Meg x 16 2 Meg x 16 x 4 4K 4K (A0-A11) 4 (BA0, BA1) 1K (A0-A9)
Architecture Configuration Refresh Count Row Addressing Bank Addressing Column Addressing
-6 -10 None IT
Table 2:
Speed Grade
Key Timing Parameters
Clock Rate CL = 3 CL = 2 Data-Out Window Access Time DQS-DQ Skew
-75 -10 -75 -10
PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H8M16.fm - Rev. A 03/05 EN
133 MHz 104 MHz -
83 MHz 67 MHz
2ns 2.8ns 4ns 5ns
6.0s 7.0ns 6.5ns 7.0ns
+0.6ns +0.7ns +0.6ns +0.7ns
1
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2005 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications.
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128Mb: 8 Meg x 16 Mobile DDR SDRAM
(R)
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. Advance: This data sheet contains initial descriptions of products still under development.
PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H8M16.fm - Rev. A 03/05 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2005 Micron Technology, Inc. All rights reserved.
Advance
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Revision History
* Original Document, Advance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 03/05
PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H8M16.fm - Rev. A 03/05 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2005 Micron Technology, Inc. All rights reserved.

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